BUJ103A

TO-220AB BUJ103A Silicon diffused power transistor Rev. 4 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits  Low thermal resistance  Fast switching 1.3 Applications  Electronic lighting ballasts  Inverters  DC-to-DC converters  Motor control systems 1.4 Quick reference data  VCESM  700 V  Ptot  80 W  IC  4 A  hFEsat = 12.5 (typ) 2. Pinning information Table 1. Pin 1 2 3 mb Pinning Description base collector emitter mounting base; connected to collector Simplified outline mb Symbol 2 1 3 sym056 123 SOT78 (TO-220AB) NXP Semiconductors BUJ103A Silicon diffused power transistor 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BUJ103A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCESM VCBO VCEO IC ICM IB IBM Ptot Tstg Tj peak collector-emitter voltage collector-base voltage collector-emitter voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation storage temperature junction temperature VBE = 0 V open emitter open base Tmb  25 C; see Figure 1 Min Max Unit - 700 V - 700 V - 400 V - ...