DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ105AB Silicon Diffused Power Transistor
Product specification
October 2001
NXP...
DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ105AB Silicon Diffused Power
Transistor
Product specification
October 2001
NXP Semiconductors
Silicon Diffused Power
Transistor
Product specification
BUJ105AB
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated
npn power switching
transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFEsat tf
PARAMETER
Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage
Fall time
CONDITIONS VBE = 0 V
Tmb ≤ 25 ˚C IC = 4.0 A;IB = 0.8 A IC = 4.0 A; VCE = 5 V IC = 5 A; IB1 = 1 A
TYP.
0.3 11 20
MAX.
700 700 400
8 16 125 1.0 15 50
UNIT
V V V A A W V
ns
PINNING - SOT404
PIN DESCRIPTION 1 base 2 collector 3 emitter mb collector
PIN CONFIGURATION
mb
2 13
SYMBOL
c
b e
LIMITING VALUES8
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj
Collector to emitter voltage Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC) Collector current peak value
Base current (DC)
Base current peak value Total power dissip...
