S10C30

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. S10C30 thru S10C60 SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 30-60 VOLTS Features ¡¯ Low Forward Voltage. ¡¯ Low Switching noise. ¡¯ High Current Capacity ¡¯ Guarantee Reverse Avalanche. ¡¯ Guard-Ring for Stress Protection. ¡¯ Low Power Loss & High efficiency. ¡¯ 150¢J Operating Junction Temperature ¡¯ Low Stored Charge Majority Carrier Conduction. ¡¯ Plastic Material used Carries Underwriters Laboratory ¡¯ TO-220AB Flammability Classification 94V-O ESD: 8KV(Min.) Human-Body Model ¡¯ In compliance with EU RoHs 2002/95/EC directives MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current ( Per doode ) Total Device (Rated VR), TC=125¢J Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol 30 VRRM VRWM VR VR(RMS) IF(AV) IFM IFSM 30 21 35 35 25 S10C 40 40 28 45 45 32 50 50 35 60 60 42 V DIM Unit V A A A ¢J 5.0 10 10 125 -65 to +150 TJ , Tstg A B C D E F G H I J K L M O MILL...