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S10C70

Mospec Semiconductor

SCHOTTKY BARRIER RECTIFIERS

MOSPEC S10C70 Thru S10C100 Schottky Barrier Rectifiers --- Using the Schottky Barrier principle with a Molybdenum barr...


Mospec Semiconductor

S10C70

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Description
MOSPEC S10C70 Thru S10C100 Schottky Barrier Rectifiers --- Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. Low Forward Voltage. Low Switching noise. High Current Capacity Guarantee Reverse Avalanche. Guard-Ring for Stress Protection. Low Power Loss & High efficiency. 150 Operating Junction Temperature Low Stored Charge Majority Carrier Conduction. Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O ESD: 4KV(Min.) Human-Body Model In compliance with EU RoHs 2002/95/EC directives SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 70-100 VOLTS TO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR), TC=125 Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase,60Hz ) Operating and Storage Junction Temperature Range Symbol 70 VRRM VRWM 70 VR VR(RMS) 49 IO IFSM S10C 80 90 Unit 100 80 90 100 V 56 63 70 V 5 10 A 125 A TJ , TSTG -65 to +150 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF =5.0 Amp) Maximum Instantaneous Reverse Current (Rated DC Voltage, TC = 25 ) (Rated...




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