Document
SHINDENGEN
Bridge Diode
Square In-line Package
S10VB20
200V 10A
OUTLINE DIMENSIONS
Case : S10VB Unit : mm
RATINGS
● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, Ta=40℃ With heatsink, θfa=2.4℃/W Average Rectified Forward Current
Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque
IFSM I2t Vdis TOR
50Hz sine wave, R-load, Ta=40℃ Without heatsink 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 1ms≦t<10ms Tc=25℃ Terminals to case, AC 1 minute (Recommended torque : 0.5N・m)
Ratings Unit -40~150 ℃ 150 ℃ 200 V 10 A 3.7 200 A 110 A2s 2 kV 0.8 N・m Ratings Unit Max.1.05 V Max.10 μA Max.2.8 ℃/W
● Electrical Characteristics (Tl=25℃) Item Symbol Conditions VF IF=5A, Forward Voltage Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current θjl junction to lead Thermal Resistance
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S10VBx
Forward Voltage
Forward Current IF [A]
10
Tl=150°C [TYP] Tl=25 °C [TYP]
1
Pulse measurement per diode
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage VF [V]
S10VBx
30
Forward Power Dissipation
Forward Power Dissipation PF [W]
25
SIN
20
15
10
5
0
0
2
4
6
8
10
12
14
Average Rectified Forward Current IO [A]
Tj = 150 °C Sine wave
S10VBx
12
Derating Curve
Average Rectified Forward Current IO [A]
10
* θ fa = 2.4°C/W l
8
l=25mm l=15mm l=5mm
6
4
2
without heatsink
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-load Free in air * with thermal compound, TOR=5kg-cm
S10VBx
250
Peak Surge Forward Capability
IFSM
10ms 10ms
1 cycle
200
Peak Surge Forward Current IFSM [A]
non-repetitive, sine wave, Tj=25 °C before surge current is applied
150
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
.