S186P

S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (l p 900 nm). The large active area combined with a flat case gives a high sensitivity at a wide viewing angle y Features D D D D D D D Fast response times Small junction capacitance High radiant sensitivity Large radiant sensitive area A=7.5 mm2 Wide angle of half sensitivity ϕ = ± 65° Plastic case with IR filter (950 mm) Suitable for near infrared radiation 94 8490 Applications High speed photo detector Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tstg Tsd RthJA Value 60 215 100 –55...+100 260 350 Unit V mW °C °C °C K/W x 25 °C t x5s Document Number 81536 Rev. 2, 20-May-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) S186P Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Short Circuit Current Reverse Light Current Test Conditions IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Symbol V(BR) Iro CD CD Vo Ik Ira Min 60 Typ 2 70...