DatasheetsPDF.com

S1G Dataheets PDF



Part Number S1G
Manufacturers NXP
Logo NXP
Description SMA controlled avalanche rectifiers
Datasheet S1G DatasheetS1G Datasheet (PDF)

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plasti.

  S1G   S1G


Document
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape • Marking: cathode, date code, type code • Easy pick and place. Top view olumns S1 series DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. cathode band k a Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM S1A S1B S1D S1G S1J S1K S1M VR continuous reverse voltage S1A S1B S1D S1G S1J S1K S1M − − − − − − − 50 100 200 400 600 800 1000 V V V V V V V PARAMETER repetitive peak reverse voltage − − − − − − − 50 100 200 400 600 800 1000 V V V V V V V CONDITIONS MIN. MAX. UNIT 2000 Feb 14 2 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series SYMBOL VRMS S1A S1B S1D S1G S1J S1K S1M IF(AV) IFSM PARAMETER root mean square voltage CONDITIONS − − − − − − − averaged over any 20 ms period; Ttp = 110 °C; see Fig.2 t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax − MIN. MAX. 35 70 140 280 420 560 700 1 V V V V V V V A UNIT average forward current non-repetitive peak forward current S1A to S1J S1K and S1M − − −65 −65 30 25 +175 +175 A A °C °C Tstg Tj storage temperature junction temperature See Fig.3 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS IF = 1 A; see Fig.4 VR = VRRMmax; see Fig.5 S1A to S1J S1K and S1M VR = VRRMmax; Tj = 165 °C; see Fig.5 trr Cd reverse recovery time diode capacitance when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 VR = 4 V; f = 1 MHz; see Fig.6 − − − 1 8 1 5 50 − − µA µA µA µs pF − TYP. MAX. 1.1 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point; see Fig.7 thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more information please refer to the ‘General Part of associated Handbook’. CONDITIONS VALUE 27 100 150 UNIT K/W K/W K/W 2000 Feb 14 3 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled avalanche rectifiers GRAPHICAL DATA MCD822 S1 series handbook, halfpage 2 MGD483 handbook, halfpage IF(AV) (A) 1.5 200 Tj (°C) 160 120 1 80 0.5 40 D G J K M 0 0 40 80 120 160 200 Ttp (°C) 0 0 400 800 VR (V) 1200 VR = VRRMmax; δ = 0.5; a = 1.57. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Device mounted as shown in Fig.8. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board. Fig.3 Maximum permissible junction temperature as a function of reverse voltage. 102 handbook, halfpage IF (A) MCD795 102 handbook, halfpage IR (µA) Tj = 165 °C MCD802 10 10 1 1 10−1 10−1 Tj = 25 °C 10−2 10−2 10−3 0 0.5 1 1.5 2 VF (V) 2.5 10−3 0 20 40 60 80 100 VR (%VRmax) Tj = 25 °C. Fig.4 Forward current as a function of forward voltage; typical values. Fig.5 Reverse current as a function of reverse voltage; typical values. 2000 Feb 14 4 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series 102 handbook, halfpage MCD801 102 handbook, halfpage MBL120 Cd (pF) Zth j-tp (K/W) 10 10 1 10−2 10−1 1 10 VR (V) 102 1 1 10 102 103 tp (ms) 104 f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. Fig.7 Transient thermal impedance as a function of pulse width. 50 4.5 50 2.5 1.25 MSB213 Dimensions in mm. Material: AL2O3 or epoxy-glass. Fig.8 Printed-circuit board for surface mounting. 2000 Feb 14 5 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series handbook, full pagewidth DUT + IF (A) 0.5 1Ω t rr 10 Ω 25 V 50 Ω 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6 www.DataSheet4U.com Philips Semiconductors Product specification SMA controlled ava.


S1DB S1G S1G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)