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S1P2655A03

Samsung semiconductor

LINEAR INTEGRATED CIRCUIT

LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP The ...


Samsung semiconductor

S1P2655A03

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Description
LINEAR INTEGRATED CIRCUIT S1P2655A01/02/03/04/05 INTRODUCTION HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collector outputs. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout. Peak inrush currents to 600mA permit them to drive incandescent lamps. The S1P2655A01 is a general purpose array for use with DTL, 16−SOP TTL, PMOS or CMOS logic directly. The S1P2655A02 version does away with the need for any external discrete resistors, since each usit has a resistor and a zener diode in series with the input. The S1P2655A02 is designed for use with 14 to 25V PMOS devices. The zener diode also gives these devices excellent noise immunity. The S1P2655A03 has a series base resistor to each darlington pair, and thus allows operation directly with TTL or CMOS operating at supply voltages of 5V. The S1P2655A03 will handle numberous interfaces needs-particularly those beyond the capailities of standard logic buffers. The S1P2655A04 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operating supply voltage of 6V to 15V. The S1P2655A05 is designed for use with standard TTL and Schottky TTL, with which hinger output currents are required and loading of the logic output is not a concern. These dev...




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