Document
SHINDENGEN
General Purpose Rectifiers
SMT Bridges
S1ZB20
200V 0.8A
FEATURES •œ Small SMT package •œ High reliability with superior •œ moisture resistance •œ Applicable to Automatic Insertion APPLICATION
•œ Switching
OUTLINE DIMENSIONS
Case : 1Z Case : 1Z Unit : mm
power supply •œ Home Appliances, Office Equipment •œ Telecommunication, Factory Automation
RATINGS
•œAbsolute Maximum Ratings (If not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage VRM 200 V IO 50Hz sine wave, R-load On alumina substrate Average Rectified Forward Current Ta=25•Ž 0.8 A 50Hz sine wave, R-load On glass-epoxy substrate 0.5 Ta=25•Ž Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25•Ž 30 A Current Squared Time I2 t 1ms•…t•ƒ10ms Tj=25•Ž 4.5 A2s •œElectrical Characteristics (If not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage VF I F =0.4A, Pulse measurement, Rating of per diodeMax.1.05 V =V , Pulse measurement, Rating of per diode Max.10 ƒÊA R RM Reverse Current IR V ƒÆjl junction to lead Max.20 Thermal Resistance ƒÆja junction to ambient On alumina substrate Max.76 •Ž/W junction to ambient On glass-epoxy substrate Max.134
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S1ZBx
10
Forward Voltage
Forward Current IF [A]
1
Tl=150°C [TYP] Tl=25 °C [TYP]
0.1
Pulse measurement per diode
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Forward Voltage VF [V]
S1ZBx
3
Forward Power Dissipation
Forward Power Dissipation PF [W]
2.5 SIN 2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
Average Rectified Forward Current IO [A]
Tj = 150 °C Sine wave
S1ZBx
0.7
Derating Curve
Average Rectified Forward Current IO [A]
0.6 SIN 0.5
PCB Glass-epoxy substrate Soldering land 6 × 2mmφ Conductor layer 35µm
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-load Free in air
S1ZBx
0.7
Derating Curve
Average Rectified Forward Current IO [A]
0.6 SIN 0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
Sine wave R-load Free in air
Soldering land Conductor layer Substrate thickness
Glass-epoxy 1mmφ 35 µm
Alumina 1mmφ 20 µm 0.64mm
S1ZBx
40
Peak Surge Forward Capability
IFSM
35
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
30
non-repetitive, sine wave, Tj=25 °C before surge current is applied
25
20
15
10
5
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
.