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S1ZB20 Dataheets PDF



Part Number S1ZB20
Manufacturers Shindengen Electric Mfg.Co.Ltd
Logo Shindengen Electric Mfg.Co.Ltd
Description General Purpose Rectifiers(200V 0.8A)
Datasheet S1ZB20 DatasheetS1ZB20 Datasheet (PDF)

SHINDENGEN General Purpose Rectifiers SMT Bridges S1ZB20 200V 0.8A FEATURES •œ Small SMT package •œ High reliability with superior •œ moisture resistance •œ Applicable to Automatic Insertion APPLICATION •œ Switching OUTLINE DIMENSIONS Case : 1Z Case : 1Z Unit : mm power supply •œ Home Appliances, Office Equipment •œ Telecommunication, Factory Automation RATINGS •œAbsolute Maximum Ratings (If not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Opera.

  S1ZB20   S1ZB20


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SHINDENGEN General Purpose Rectifiers SMT Bridges S1ZB20 200V 0.8A FEATURES •œ Small SMT package •œ High reliability with superior •œ moisture resistance •œ Applicable to Automatic Insertion APPLICATION •œ Switching OUTLINE DIMENSIONS Case : 1Z Case : 1Z Unit : mm power supply •œ Home Appliances, Office Equipment •œ Telecommunication, Factory Automation RATINGS •œAbsolute Maximum Ratings (If not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40•`150 •Ž Operating Junction Temperature Tj 150 •Ž Maximum Reverse Voltage VRM 200 V IO 50Hz sine wave, R-load On alumina substrate Average Rectified Forward Current Ta=25•Ž 0.8 A 50Hz sine wave, R-load On glass-epoxy substrate 0.5 Ta=25•Ž Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25•Ž 30 A Current Squared Time I2 t 1ms•…t•ƒ10ms Tj=25•Ž 4.5 A2s •œElectrical Characteristics (If not specified Tl=25•Ž) Item Symbol Conditions Ratings Unit Forward Voltage VF I F =0.4A, Pulse measurement, Rating of per diodeMax.1.05 V =V , Pulse measurement, Rating of per diode Max.10 ƒÊA R RM Reverse Current IR V ƒÆjl junction to lead Max.20 Thermal Resistance ƒÆja junction to ambient On alumina substrate Max.76 •Ž/W junction to ambient On glass-epoxy substrate Max.134 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S1ZBx 10 Forward Voltage Forward Current IF [A] 1 Tl=150°C [TYP] Tl=25 °C [TYP] 0.1 Pulse measurement per diode 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage VF [V] S1ZBx 3 Forward Power Dissipation Forward Power Dissipation PF [W] 2.5 SIN 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.2 Average Rectified Forward Current IO [A] Tj = 150 °C Sine wave S1ZBx 0.7 Derating Curve Average Rectified Forward Current IO [A] 0.6 SIN 0.5 PCB Glass-epoxy substrate Soldering land 6 × 2mmφ Conductor layer 35µm 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] Sine wave R-load Free in air S1ZBx 0.7 Derating Curve Average Rectified Forward Current IO [A] 0.6 SIN 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] Sine wave R-load Free in air Soldering land Conductor layer Substrate thickness Glass-epoxy 1mmφ 35 µm Alumina 1mmφ 20 µm 0.64mm S1ZBx 40 Peak Surge Forward Capability IFSM 35 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 30 non-repetitive, sine wave, Tj=25 °C before surge current is applied 25 20 15 10 5 0 1 2 5 10 20 50 100 Number of Cycles [cycles] .


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