Document
HIGH-SPEED TRANSIENT SURGE PROTECTORS
UNI-IMPS
DESCRIPTION
CP Clare’s UNI-IMP high-speed transient surge protectors (0.55-20kV) provide the ultimate protection from highenergy, fast-rising transients such as Nuclear EMP. These devices are constructed using a proprietary semiconductor junction process that results in nanosecond response times combined with peak current ratings in excess of 20kA. A unique benefit of this technology is that the breakdown voltage is virtually independent of the rise time of the transient. In addition, the low capacitance of these devices allows for direct placement on highfrequency lines and antenna feeds without excessive loading.
FEATURES
s Fast impulse breakdown (≤120% of typical DC
APPLICATIONS
s s s s s
breakdown to 200kV/µs) s Tight DC breakdown voltage tolerance (± 10%) s Non-radioactive s Low capacitance
Antenna feedlines Test equipment Video displays Medical electronics Instrumentation circuits
STANDARD VOLTAGES
Series UBD DC Breakdown Voltage (typ) 550 600 650 750 850 1.0 1.2 1.5 2.0 2.5 3.0 4.0 4.0 5.0 6.0 7.5 10.0 12.0 15.0 20.0 V V V V V kV kV kV kV kV kV kV kV kV kV kV kV kV kV kV Unit
UBT and UGT
(See detailed specifications for more information.)
www.cpclare.com
561
HIGH-SPEED TRANSIENT SURGE PROTECTORS
UNI-IMPS
SPECIFICATIONS
All characteristics at 25˚C
UBD-550
CONDITIONS
100V/s 5kV/µs 100V 1MHz 3kA (PW=15µs)
UBD-600
MIN
540 1010 420
UBD-650
MIN
585 1010 500
PARAMETER Device Specifications
DC Breakdown Impulse Breakdown Insulation Resistance Capacitance
SYMBOL MIN TYP
V BD Vbd IR C 495 1010 330 550 -
MAX
605 660 20.0 -
TYP
600 -
MAX
660 720 20.0 -
TYP
650 -
MAX UNITS
715 780 20.0 V V Ω pF surges
Life Ratings
Surge Life
UBD-750
PARAMETER Device Specifications
DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/µs 100V 1MHz 3kA (PW=15µs) V BD Vbd IR C 675 1010 660 750 825 900 20.0 -
UBD-850
MIN
765 1010 830
UBD-1.0
MIN
900 1010 1080
CONDITIONS
SYMBOL MIN TYP
MAX
TYP
850 -
MAX
935 1020 20.0 -
TYP
1000 -
MAX UNITS
1100 1200 15.0 V V Ω pF surges
Life Ratings
Surge Life
UBD-1.2
PARAMETER Device Specifications
DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/µs 100V 1MHz 3kA (PW=15µs) V BD Vbd IR C 1.08 1.20 1010 1410 1.32 1.44 15.0 -
UBD-1.5
MIN
1.35 1010 1900
UBD-2.0
MIN
1.80 1010 2400
CONDITIONS
SYMBOL MIN TYP
MAX
TYP
1.50 -
MAX
1.65 1.80 15.0 -
TYP
2.00 -
MAX UNITS
2.20 2.40 10.0 kV kV Ω pF surges
Life Ratings
Surge Life
UBD-2.5
PARAMETER Device Specifications
DC Breakdown Impulse Breakdown Insulation Resistance Capacitance 100V/s 5kV/µs 100V 1MHz 3kA (PW=15µs) V BD Vbd IR C 2.25 2.50 1010 2400 2.75 3.00 10.0 -
UBD-3.0
MIN
2.70 1010 2400
UBD-4.0
MIN
3.60 1010 2400
CONDITIONS
SYMBOL MIN TYP
MAX
TYP
3.00 -
MAX
3.30 3.60 5.0 -
TYP
4.00 -
MAX UNITS
4.40 4.80 5.0 kV kV Ω pF surges
Life Ratings
Surge Life
UBT-4.0 UGT-4.0
PARAMETER Device Specifications
DC Breakdown Impulse Breakdown Insulation Resistance.