Document
UHBS60-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS60-1 is Designed for
PACKAGE STYLE .230 6L FLG FEATURES:
• • • Omnigold™ Metalization System
.115 .430 D E .125 G F H I J K L A .040x45° 4X .025 R C B 2XØ.130
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
9.0 A 50 V 26 V 50 V 4.0 V 190 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.9 OC/W
O O O O
DIM A B C D E F G H I J K L MINIMUM
inches / mm
MAXIMUM
inches / mm
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60
ORDER CODE: ASI10672
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICES ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 20 V VCB = 30 V
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
50 50 26 3.0 10 5
UNITS
V V V V mA mA --pF dB %
VCE = 5.0 V VCB = 24 V VCE = 24 V
IC = 1.0 A f = 1.0 MHz POUT = 60 W f = 900 GHz
20
100 75
7.5 55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
.