ULBM10
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM10 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES...
ULBM10
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI ULBM10 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES:
Omnigold™ Metalization System
B A 45°
D
C J
MAXIMUM RATINGS
E
I
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
O
2.5 A 36 V 16 V 36 V 4.0 V 58 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 7.0 OC/W
O O O O
DIM A B C D E F G H I J K
F G H K MINIMUM
inches / mm
#8-32 UNC MAXIMUM
inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .217 / 5.51 .285 / 7.24
ORDER CODE: ASI10682
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICEO ICES hFE Cob PG ηC IC = 20 mA IC = 25 mA IE = 10 mA VCB = 15 V
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16 36 4.0 2.0 3.0
UNITS
V V V mA mA --pF dB
VCE = 10 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 10 W IC = 1.0 A f = 1.0 MHz f = 470 MHz 7.0 60 10
--25
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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