ULBM2TE

ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for PACKAGE STYLE TO-39GE B C ØA 45° FEATURES: Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O F 0.40 A 36 V 16 V 4.0 V 5 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 35 OC/W O DIM A B C D E F G H G H MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .029 / 0.740 .028 / 0.720 .355 / 9.020 .315 / 8.010 .165 / 4.200 .500 / 12.700 .016 / 0.410 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .180 / 4.570 .750 / 19.050 .020 / 0.508 ORDER CODE: ASI10679 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob PG ηC IC = 50 mA IC = 50 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V mA --pF dB IE = 1.0 mA VCB = 15 V VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V POUT = 2.0 W IC = 50 mA f = 1.0 MHz f = 470 MHz 20 200 10 8.0 55 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...