ULBM5
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM5 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES:
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ULBM5
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI ULBM5 is Designed for
PACKAGE STYLE .280 4L STUD FEATURES:
Omnigold™ Metalization System
45° B A
MAXIMUM RATINGS
IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC
O
D
C J
2.0 A 36 V 18 V 36 V 4.0 V 37 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 11.6 OC/W
O
DIM A B C D E F G H I J K
E F G H K MINIMUM
inches / mm
I
#8-32 UNC MAXIMUM
inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .217 / 5.51 .285 / 7.24
ORDER CODE: ASI10680
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE Cob PG IC = 50 mA IC = 10 mA
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16 36 4.0 1.0
UNITS
V V V mA --pF dB
IE = 2.0 mA VCB = 15 V VCE = 5.0 V VCB = 12 V VCC = 12.5 V PIN = 0.70 W IC = 200 mA f = 1.0 MHz f = 470 MHz
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A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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