UMA9N

UMA9N / FMA9A Transistors Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9N !Features 1) Two DTA114E chips in UMT and SMT packages. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm) UMA9N 2.0±0.2 1.3±0.1 0.65 0.65 FMA9A 2.9±0.2 0.9±0.1 0.7 (3) 1.25±0.1 1.9±0.2 0.95 0.95 1.1 +0.2 −0.1 0.8±0.1 (5) 1.6 +0.2 −0.1 (2) (3) (1) 2.1±0.1 (4) 2.8±0.2 0~0.1 (2) (1) 0~0.1 !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) (4) 0.2 (5) +0.1 −0.05 0.1Min. 0.15±0.05 All terminals have same dimensions. All terminals have same dimensions. ROHM : UMT5 EIAJ : SC-88A ROHM : SMT5 EIAJ : SC-74A (3) R1 DTr2 R2 (2) R2 (1) R1 DTr1 (5) R1 = 10kΩ (3) R1 DTr2 (2) R2 (4) R2 (5) R1 DTr1 (1) The following characteristics apply to both DTr1 and DTr2. (4) R2 = 10kΩ Abbreviated symbol: A10 R1 = 10kΩ R2 = 10kΩ !Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage Symbol VCC VIN IO Output current Power dissipation UMA9N FMA9A Tj Tstg IC (MAX.) Pd Limits −50 −40 10 −50 −100 150 (TOTAL) 300 (TOTAL) 150 −50~+150 °C °C Unit V V mA mW *1 *2 Junction temperature Storage temperature * * 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. !Electrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (o...