EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Paramet...
EMB3 / UMB3N / IMB3A
PNP -100mA -50V Complex Digital
Transistors (Bias Resistor Built-in
Transistors) Datasheet
Parameter
VCEO IC(MAX.)
R1
Tr1 and Tr2
-50V -100mA
4.7kW
lFeatures
1) Built-In Biasing Resistors. 2) Two DTA143T chips in one package. 3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant.
lOutline
EMT6
(6)
(5)
(1)
(4)
(2)
(3)
EMB3 (SC-107C)
SMT6
(4) (5) (6)
(3) (2) (1)
IMB3A SOT-457 (SC-74)
lInner circuit
EMB3 / UMB3N
Collector (6)
Base (5)
Emitter (4)
UMT6
(6) (5) (4)
(1) (2) (3)
UMB3N SOT-363 (SC-88)
Collector (4)
IMB3A
Base (5)
Emitter (6)
lApplication Inverter circuit, Interface circuit, Driver circuit
(1) Emitter
(2) Base
(3) Collector
(3) Emitter
(2) Base
(1) Collector
lPackaging specifications
Part No.
Package
EMB3 UMB3N IMB3A
EMT6 UMT6 SMT6
Package size (mm)
1616
2021
2928
Taping code
T2R TR T108
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
180
8
8,000
180
8
3,000
180
8
3,000
Marking
B3 B3 B3
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1/6
2012.06 - Rev.C
EMB3 / UMB3N / IMB3A
lAbsolute ...