Document
UMC2NT1, UMC3NT1, UMC5NT1
Preferred Devices
Dual Common Base-Collector Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1 series, two complementary BRT devices are housed in the SOT–353 package which is ideal for low power surface mount applications where board space is at a premium.
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3 R1 2 R2 1
R2 Q1 R1 4
Q2
5
• • • •
Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
SC–88A/SOT–323 CASE 419A STYLE 6
MARKING DIAGRAM
5 Ux 1 2 3 4
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, – minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
Ux = Device Marking x = 2, 3 or 5
THERMAL CHARACTERISTICS
Thermal Resistance – Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C (Note 1.) RθJA TJ, Tstg PD 833 –65 to +150 *150 °C/W °C mW
ORDERING INFORMATION
Device UMC2NT1 UMC3NT1 UMC5NT1 Package SOT–323 SOT–323 SOT–323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
DEVICE MARKING AND RESISTOR VALUES
Transistor 1 – PNP Device UMC2NT1 UMC3NT1 UMC5NT1 Marking U2 U3 U5 R1 (K) 22 10 4.7 R2 (K) 22 10 10 Transistor 2 – NPN R1 (K) 22 10 47 R2 (K) 22 10 47
Preferred devices are recommended choices for future use and best overall value.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 1
Publication Order Number: UMC2NT1/D
UMC2NT1, UMC3NT1, UMC5NT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 ICBO ICEO IEBO – – – – – – – – – – 100 500 0.2 0.5 1.0 nAdc nAdc mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 V(BR)CBO V(BR)CEO hFE 50 50 60 35 20 – – 4.9 15.4 7.0 3.3 0.8 0.8 0.38 – – 100 60 35 – – – 22 10 4.7 1.0 1.0 0.47 – – – – – 0.25 0.2 – 28.6 13 6.1 1.2 1.2 0.56 Vdc Vdc Vdc kW Vdc Vdc
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 UMC2NT1 UMC3NT1 UMC5NT1
VCE(SAT) VOL VOH R1
Resistor Ratio
R1/R2
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 ICBO ICEO IEBO – – – – – – – – – – 100 500 0.2 0.5 0.1 nAdc nAdc mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1 UMC3NT1 UMC5NT1 V(BR)CBO V(BR)CEO hFE 50 50 60 35 80 – – 4.9 15.4 7.0 33 0.8 0.8 0.8 – – 100 60 140 – – – 22 10 47 1.0 1.0 1.0 – – – – – 0.25 0.2 – 28.6 13 61 1.2 1.2 1.2 Vdc Vdc Vdc kW Vdc Vdc
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor UMC2NT1 UMC3NT1 UMC5NT1 UMC2NT1 UMC3NT1 UMC5NT1
VCE(SAT) VOL VOH R1
Resistor Ratio
R1/R2
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UMC2NT1, UMC3NT1, UMC5NT1
250 PD , POWER DISSIPATION (MILLIWATTS) 200
150 100 50 0 -ā50 RθJA = 833°C/W
0 50 100 TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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UMC2NT1, UMC3NT1, UMC5NT1
TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE, DC CURRENT GAIN 1000
VCE = 10 V
1 TAĂ=Ă-25°C
25°C
TAĂ=Ă75°C 100
25°C
-25°C
75°C ā0.1
0.01
0
ā20 IC, COLLECTOR CURRENT (mA)
ā40
ā50
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 mA TA = 25°C
100 75°C 10
25°C TAĂ=Ă-25°C
Cob , CAPACITANCE (pF)
3
1
2
ā0.1
1
ā0.01 0 1 ā2 ā3 ā4 ā5 ā6 ā7 Vin, INPUT VOLTAGE (VOLTS) ā8
VO = 5 V ā9 10
0
0
10 20 30 40 VR, REVERSE BIAS .