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UML6N

Rohm

General purpose transistor

UML6N Transistors General purpose transistor (isolated transistor and diode) UML6N 2SA2018 and RB521S-30 are housed ind...


Rohm

UML6N

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Description
UML6N Transistors General purpose transistor (isolated transistor and diode) UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. (4) (3) zApplications DC / DC converter Motor driver zExternal dimensions (Unit : mm) 0.65 0.65 1.3 0.9 0.2 0.15 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (5) 1.25 2.1 0.7 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode 0~0.1 Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A zEquivalent circuit (3) (2) (1) Tr2 Di1 (4) (5) zPackaging specifications Type UML6N Package UMT5 Marking L6 Code TR Basic ordering unit (pieces) 3000 (1) Rev.A 2.0 (2) 1/3 UML6N Transistors zAbsolute maximum ratings (Ta=25°C) Di1 Parameter Symbol IO Average revtified forward current Forward current surge peak (60Hz, 1∞) IFSM VR Reverse voltage (DC) Tj Junction temperature Tstg Range of storage temperature Limits 200 1 30 125 −55~+125 Unit mA A V °C °C Tr2 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 15 12 6 500 1 120 150 −55~+125 Unit V V V mA A mW °C °C ∗1 ∗1 Each terminal mounted on a recommended land. zElectrical characteristics (Ta=25°C) Di1 Parameter Forward voltage Reverse current Symbol VR IR Min. − − Typ. 0.40 4.0 Max. 0.50 30 Unit V µA Conditions IF=200mA VR=10V Tr2 Parameter Collector-emitter bre...




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