Document
Transistors
EMX4 / UMX4N / IMX4
High transition frequency (dual transistors)
EMX4 / UMX4N / IMX4
zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF)
zEquivalent circuits
EMX4 / UMX4N
(3) (2) (1)
IMX4
(4) (5) (6)
(4) (5) (6)
(3) (2) (1)
zDimensions (Unit : mm)
EMX4
ROHM : EMT6 UMX4N
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power EMX4 / UMX4N
dissipation
IMX4
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
Symbol VCBO VCEO VEBO IC
Pc
Tj Tstg
Limits 30 20 3 50
150(TOTAL) 300(TOTAL)
150 −55 to +150
Unit V V V mA ∗1
mW ∗2
°C °C
zPackage, marking, and packaging specifications
Type Package Marking
Code Basic ordering unit (pieces)
EMX4 EMT6
X4 T2R 8000
UMX4N UMT6
X4 TR 3000
IMX4 SMT6
X4 T108 3000
ROHM : UMT6 EIAJ : SC-88 IMX4
ROHM : SMT6 EIAJ : SC-74
Each lead has same dimensions Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Collector-base time constant Noise factor
∗Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO
ICBO IEBO hFE VCE(sat) fT Cob rbb' Cc NF
Min. 30 20 3 − − 56 − 600 − − −
Typ. − − − − − − −
1500 0.95
6 4.5
Max. − − − 0.5 0.5
180 0.5 − 1.6 13 −
Unit V V V µA µA − V
MHz pF ps dB
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=2V
VCE/IC=10V/10mA
IC/IB=20mA/4mA
VCE/IE=10V/ −10mA, f=200MHz
∗
VCB/f=10V/1MHz, IE=0A
VCB=10V, IC=10mA , f=31.8MHz
VCE=12V, IC=2mA , f=200MHz , Rg=50Ω
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
Rev.C
1/3
OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF)
COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV)
DC CURRENT TRANSFER RATIO :hFE
Transistors
zElectrical characteristic curves
500 Ta=25°C VCE=10V
200
100
50
500
200 100 50
EMX4 / UMX4N / IMX4
Ta=25°C IC/IB=5
5.0
2.0 1.0 0.5
Ta=25°C f=1MHz IE=0A
Cob
Cre
20
10 0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.1 DC current gain vs. collector current
20
10 0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.2 Collector-emitter saturation voltage vs. collector current
0.2
0.1 0.1 0.2
0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.3 Capacitance vs. reverse bias voltage
COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps)
TRANSITION FREQUENCY : fT (MHz)
5000
Ta=25°C
50
VCE=10V
2000 20 1000 10
500 5
200
100 −0.1 −0.2 −0.5 −1 −2
−5 −10 −20
EMITTER CURRENT : IE (mA)
−50
Fig.4 Gain bandwidth product vs. emitter current
2 1 0.1 0.2
0.5 1 2
Ta=25°C VCE=10V f=31.8MHz
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector to base time constance vs. collector current
INSERTION GAIN : IS21el2 (dB)
Ta=25°C 25 VCE=10V
IC=10mA
20
15
10
5
0 0.1 0.2
0.5 1 2
5
FREQUENCY : f (GHz)
10
Fig.6 Insertion gain vs. frequency
INSERTION GAIN : IS21el2 (dB)
25 Ta=25°C VCE=12V f=200MHz
20
15
10
5
0 0.5 1
2
5 10 20
50
COLLECTOR CURRENT : Ic (mA)
Fig.7 Insertion gain vs. collector current
INSERTION GAIN : IS21el2 (dB)
30 Ta=25°C IC=2mA
25 f=200MHz
20
15
10
5
0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Insertion gain vs. collector voltage
NOISE FIGURE : NF(dB)
Ta=25°C VCE=12V f=200MHz
20
10
0 0.1 0.2
0.5 1 2
5 10 20
COLLECTOR CURRENT : IC (mA)
50
Fig.9 Noise factor vs. collector current
Rev.C
2/3
NOISE FIGURE : NF(dB)
Transistors
30 Ta=25°C IC=2mA
25 f=200MHz 20
15 10 5 0
0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Noise factor vs. collector voltage
EMX4 / UMX4N / IMX4
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specific.