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UMX4N Dataheets PDF



Part Number UMX4N
Manufacturers Rohm
Logo Rohm
Description Dual Transistor
Datasheet UMX4N DatasheetUMX4N Datasheet (PDF)

Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector.

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Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power EMX4 / UMX4N dissipation IMX4 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 30 20 3 50 150(TOTAL) 300(TOTAL) 150 −55 to +150 Unit V V V mA ∗1 mW ∗2 °C °C zPackage, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMX4 EMT6 X4 T2R 8000 UMX4N UMT6 X4 TR 3000 IMX4 SMT6 X4 T108 3000 ROHM : UMT6 EIAJ : SC-88 IMX4 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Each lead has same dimensions zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Collector-base time constant Noise factor ∗Transition frequency of the device. Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob rbb' Cc NF Min. 30 20 3 − − 56 − 600 − − − Typ. − − − − − − − 1500 0.95 6 4.5 Max. − − − 0.5 0.5 180 0.5 − 1.6 13 − Unit V V V µA µA − V MHz pF ps dB Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=2V VCE/IC=10V/10mA IC/IB=20mA/4mA VCE/IE=10V/ −10mA, f=200MHz ∗ VCB/f=10V/1MHz, IE=0A VCB=10V, IC=10mA , f=31.8MHz VCE=12V, IC=2mA , f=200MHz , Rg=50Ω This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.C 1/3 OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF) COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) DC CURRENT TRANSFER RATIO :hFE Transistors zElectrical characteristic curves 500 Ta=25°C VCE=10V 200 100 50 500 200 100 50 EMX4 / UMX4N / IMX4 Ta=25°C IC/IB=5 5.0 2.0 1.0 0.5 Ta=25°C f=1MHz IE=0A Cob Cre 20 10 0.1 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) 50 Fig.1 DC current gain vs. collector current 20 10 0.1 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) 50 Fig.2 Collector-emitter saturation voltage vs. collector current 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.3 Capacitance vs. reverse bias voltage COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps) TRANSITION FREQUENCY : fT (MHz) 5000 Ta=25°C 50 VCE=10V 2000 20 1000 10 500 5 200 100 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) −50 Fig.4 Gain bandwidth product vs. emitter current 2 1 0.1 0.2 0.5 1 2 Ta=25°C VCE=10V f=31.8MHz 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.5 Collector to base time constance vs. collector current INSERTION GAIN : IS21el2 (dB) Ta=25°C 25 VCE=10V IC=10mA 20 15 10 5 0 0.1 0.2 0.5 1 2 5 FREQUENCY : f (GHz) 10 Fig.6 Insertion gain vs. frequency INSERTION GAIN : IS21el2 (dB) 25 Ta=25°C VCE=12V f=200MHz 20 15 10 5 0 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : Ic (mA) Fig.7 Insertion gain vs. collector current INSERTION GAIN : IS21el2 (dB) 30 Ta=25°C IC=2mA 25 f=200MHz 20 15 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Insertion gain vs. collector voltage NOISE FIGURE : NF(dB) Ta=25°C VCE=12V f=200MHz 20 10 0 0.1 0.2 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) 50 Fig.9 Noise factor vs. collector current Rev.C 2/3 NOISE FIGURE : NF(dB) Transistors 30 Ta=25°C IC=2mA 25 f=200MHz 20 15 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Noise factor vs. collector voltage EMX4 / UMX4N / IMX4 Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specific.


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