Document
UMZ6.8N
Diodes
Zener Diode
UMZ6.8N
!Applications Constant voltage control For the ESD measure of a signal line !External dimensions (Units: mm)
2.0±0.2 1.3±0.1 0.65 0.65 0.9±0.1 0.3 0.6
0.3±0.1
0.15±0.05
(All pins have the same dimensions)
!Construction Silicon epitaxial planar
ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323
!Circuit
!Absolute maximum ratings (Ta=25°C)
Parameter Power dissipation
∗
Symbol
P
Limits 200 150 −55~+150
Unit mW °C °C
Junction temperature Storage temperature
Tj Tstg
∗ Total of 2 elements
!Electrical characteristics (Ta=25°C)
Parameter Zener voltage Reverse current Operating resistance Capacitance between terminals Symbol VZ IR ZZ CT Min. 6.47 − − − Typ. − − − 9 Max. 7.14 0.5 40 − Unit V µA Ω pF IZ=5mA VR=3.5V IZ=5mA f=1MHZ, VR=5V Conditions
0.1Min.
6C
!Features 1) Small surface mounting type (UMD3) 2) Composite type with two cathode common elements 3) High reliability
1.25±0.1
2.1±0.1
0~0.1
UMZ6.8N
Diodes
!Others
Item Standard1 IEC1000-4-2 Charge/discharge capacitance : 200pF±10% Charge/discharge capacitance : 150pF Device configuration Discharge resistance : 400Ω ±10% Discharge resistance : 330Ω 5 repetitions No spark or smoke emitted : ±25kV No element destruction No malfunction : ±20kV : ± 8kV 10 repetitions No malfunction Contact Suspended : ± 8kV : ±15kV
Judgment contents
!Electrical characteristic curves (Ta=25°C)
−25°C 25°C75°C 125°C
300
DYNAMIC IMPEADANCE : Zz (Ω)
POWER DISSIPATION : Pd (mW)
ZENER CURRENT : Iz (A)
10m 1m
100
200
100µ 10µ 1µ 100n 5 6 7 8
10
100
1 0.01
0.1
1
10
0 0
25
50
100
150
ZENER VOLTAGE : Vz (V)
ZENER CURRENT : Iz (mA)
AMBIENT TEMPERATURE : Ta (˚C)
Fig.1 Zener voltage characteristic
Fig.2 Operating resistance Zener current characteristic
Fig.3 Derating curve
.