UN1118

Transistors with built-in Resistor UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor For digital circuits 6.9±0.1 1.5 2.5±0.1 1.0 Unit: mm s q q 0.4 1.5 R0.9 R0.9 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 3.5±0.1 1.0 2.4±0.2 2.0±0.2 0.45±0.05 2 1 2.5 1.0±0.1 R 0. 7 0.85 0.55±0.1 s Resistance by Part Number q q q q q q q q q q q q q q q UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1110 UN111D UN111E UN111F UN111H UN111L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 3 2.5 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 1.25±0.05 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C 4.1±0.2 4.5±0.1 1 Transistors with built-in Resistor UN1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L s Electrical Characteristics Parameter Collector cutoff current UN1111 UN1112/1114/111E/111D UN1113 Emitter cutoff...