UN1123

Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor For digital circuits s Features q q Unit: mm 6.9±0.1 1.5 2.5±0.1 1.0 1.0±0.1 R 0. 7 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.4 1.5 R0.9 R0.9 3.5±0.1 1.0 2.4±0.2 2.0±0.2 0.45±0.05 2 1 2.5 0.85 s q q q q q q Resistance by Part Number UN1121 UN1122 UN1123 UN1124 UN112X UN112Y (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ 0.55±0.1 3 2.5 1:Base 2:Collector 3:Emitter M Type Mold Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection 1.25±0.05 C B R2 E 4.1±0.2 4.5±0.1 1 Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y s Electrical Characteristics Parameter Collector cutoff current UN112X Collector cutoff current UN112X Emitter cutoff current UN1121 UN1122/112X/112Y UN1123/1124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 IC = –10µA, IE = 0 –50 40 hFE VCE = –10V, IC = –100m...