UN212X

Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y Silicon PNP epitaxial planer transistor For digital circuits s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8 –0.3 0.65±0.15 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 1.45 0 to 0.1 2 s Resistance by Part Number 1.1 –0.1 +0.2 q q q q q q UN2121 UN2122 UN2123 UN2124 UN212X UN212Y Marking Symbol (R1) 7A 2.2kΩ 7B 4.7kΩ 7C 10kΩ 7D 2.2kΩ 7I 0.27kΩ 7Y 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.8 EIAJ:SC-59 Mini Type Package s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 200 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection C B R2 E 0.16 –0.06 +0.1 0.4 –0.05 +0.1 1 Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y s Electrical Characteristics Parameter Collector cutoff current UN212X Collector cutoff current UN212X Emitter cutoff current UN2121 UN2122/212X/212Y UN2123/2124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V,...