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UN2219 Dataheets PDF



Part Number UN2219
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN epitaxial planar transistor
Datasheet UN2219 DatasheetUN2219 Datasheet (PDF)

Transistors with built-in Resistor UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.9.

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Transistors with built-in Resistor UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits 0.65±0.15 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 1.5 –0.05 +0.25 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 q q q q q q q q q q q q q q q q q q q q UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 UN2219 UN2210 UN221D UN221E UN221F UN221K UN221L UN221M UN221N UN221T UN221V UN221Z Marking Symbol (R1) 8A 10kΩ 8B 22kΩ 8C 47kΩ 8D 10kΩ 8E 10kΩ 8F 4.7kΩ 8H 22kΩ 8I 0.51kΩ 8K 1kΩ 8L 47kΩ 8M 47kΩ 8N 47kΩ 8O 4.7kΩ 8P 10kΩ 8Q 4.7kΩ EL 2.2kΩ EX 4.7kΩ EZ 22kΩ FD 2.2kΩ FF 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ 1.1 –0.1 1:Base 2:Emitter 3:Collector EIAJ:SC-59 Mini Type Package Internal Connection R1 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.16 –0.06 +0.2 +0.1 s Resistance by Part Number 1.45 1 UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z s Electrical Characteristics Parameter Collector cutoff current UN2211 UN2212/2214/221E/221D/221M/221N/221T UN2213 Emitter cutoff current UN2215/2216/2217/2210 UN221F/221K UN2219 UN2218/221L/221V UN221Z Collector to base voltage Collector to emitter voltage UN2211 UN2212/221E Forward current transfer ratio UN2213/2214/221M UN2215*/2216*/2217*/2210* UN221F/221D/2219 UN2218/221K/221L UN221N/221T UN221V Collector to emitter saturation voltage UN221V Output voltage high level Output voltage low level UN2213/221K UN221D UN221E Transition frequency UN2211/2214/2215/221K UN2212/2217/221T Input resistance UN2213/221D/221E/2210 UN2216/221F/221L/221N/221Z UN2218 UN2219 UN221M/221V (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 min typ max 0.1 0.5 0.5 0.2 0.1 IEBO VEB = 6V, IC = 0 0.01 1.0 1.5 2.0 0.4 VCBO VCEO IC = 10µA, IE = 0 IC = 2mA, IB = 0 50 50 35 60 80 hFE VCE = 10V, IC = 5mA 160 30 20 80 60 VCE(sat) VOH IC = 10mA, IB = 0.3mA IC = 10mA, IB = 1.5mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VOL VCC = 5V, VB = 3.5V, RL = 1kΩ VCC = 5V, VB = 10V, RL = 1kΩ VCC = 5V, VB = 6V, RL = 1kΩ fT VCB = 10V, IE = –2mA, f = 200MHz 150 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ 4.9 0.2 0.2 0.2 0.2 MHz V 0.04 400 200 0.25 0.25 V V — 460 V V mA Unit µA µA * hFE rank classification (UN2215/2216/2217/2210) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z s Electrical Characteristics (continued) Parameter UN2211/2212/2213/221L UN2214 UN2218/2219 UN221D Resistance ratio UN221E UN221F/221T UN221K UN221M UN211N UN211V UN211Z R1/R2 Symbol (Ta=25˚C) Conditions min 0.8 0.17 0.08 typ 1.0 0.21 0.1 4.7 2.14 0.47 2.13 0.047 0.1 1.0 0.21 max 1.2 0.25 0.12 Unit 3 UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Common characteristics chart PT — Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN2211 IC — VCE 160 140 IB=1.0mA 0.9mA 0.8mA Ta=25˚C VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 0.1 –25˚C 0.03 0.01 0.1 120 100 80 60 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA Forward current transfer ratio hFE Collector current IC (mA) 300 Ta=75˚C 200 25˚C 100 –25˚C 0.2mA 40 20 0 0 2 4 6 8 10 12 25˚C Ta=75˚C 0.1mA 0 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C 10000 3000 VO=5V Ta=25˚C 100 30 VIN — IO VO=0.2V Ta=25˚C Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 300 100 30 10 3 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/ Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Characteristics charts of UN2212 IC — VCE 160 VCE(sat) — IC 100 hFE — IC IC/IB=10 400 VCE=10V Ta=2.


UN2218 UN2219 UN221D


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