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UN6118 Dataheets PDF



Part Number UN6118
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Datasheet UN6118 DatasheetUN6118 Datasheet (PDF)

Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q s Resistance by Part Number q q q q q q q q q q q q q q q 0.45–0.05 +0.1 UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 1.

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Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/6118/ 6119/6110/611D/611E/611F/611H/611L Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q s Resistance by Part Number q q q q q q q q q q q q q q q 0.45–0.05 +0.1 UN6111 UN6112 UN6113 UN6114 UN6115 UN6116 UN6117 UN6118 UN6119 UN6110 UN611D UN611E UN611F UN611H UN611L (R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 2.2kΩ 4.7kΩ (R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 1 : Emitter 2 : Collector 3 : Base MT-1 Type Package Internal Connection R1 2.5±0.1 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C 14.5±0.5 q 0.85 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 0.65 max. 1.0 3.5±0.1 0.8 s Features 0.15 0.7 4.0 1 Transistors with built-in Resistor UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L s Electrical Characteristics Parameter Collector cutoff current UN6111 UN6112/6114/611E/611D Emitter cutoff current UN6113 UN6115/6116/6117/6110 UN611F/611H UN6119 UN6118/611L Collector to base voltage Collector to emitter voltage UN6111 UN6112/611E Forward current transfer ratio UN6113/6114 UN6115*/6116*/6117*/6110* UN611F/611D/6119/611H UN6118/611L Collector to emitter saturation voltage Output voltage high level Output voltage low level UN6113 UN611D UN611E Transition frequency UN6111/6114/6115 UN6112/6117 Input resistance UN6113/6110/611D/611E UN6116/611F/611L UN6118 UN6119 UN611H UN6111/6112/6113/611L UN6114 Resistance ratio UN6118/6119 UN611D UN611E UN611F UN611H (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 VCBO VCEO IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 hFE VCE = –10V, IC = –5mA 80 160 30 20 VCE(sat) VOH IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz 80 10 22 47 R1 (–30%) 4.7 0.51 1 2.2 0.8 0.17 0.08 R1/R2 3.7 1.7 0.37 0.17 1.0 0.21 0.1 4.7 2.14 0.47 0.22 1.2 0.25 0.12 5.7 2.6 0.57 0.27 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.25 V V 460 V V mA Unit µA µA * hFE rank classification (UN6115/6116/6117/6110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 Transistors with built-in Resistor Common characteristics chart PT — Ta 500 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of UN6111 IC — VCE –160 –140 IB=–1.0mA Ta=25˚C –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE= –10V hFE — IC Ta=75˚C –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C Collector current IC (mA) –0.9mA –120 –100 –80 –60 –0.3mA –40 –0.2mA –20 –0.1mA 0 0 –2 –4 –6 –8 –10 –12 –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA Forward current transfer ratio hFE 25˚C 120 –25˚C 80 25˚C 40 –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C VIN — IO VO=–5V Ta=25˚C –100 –30 VO= –0.2V Ta=25˚C –10000 –3000 Collector output capacitance Cob (pF) 5 Output current IO (µA) 4 Input voltage VIN (V) –1000 –300 –100 –30 –10 –3 –10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3 3 2 1 0 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Transistors with built-in Resistor Characteristics charts of UN6112 IC — VCE –160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100 UN6111/6112/6113/6114/6115/6116/6117/ 6118/6119/6110/611D/611E/611F/611H/611L VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE — IC 400 VCE= –10V –30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Forward current transfer ratio hFE Collector current IC (mA) –120 –100 300 Ta=75˚C 200 25˚C –25˚C 100 25˚C Ta=75˚C –1 –3 –10 –30 –100 0 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob — VCB 6 IO — VIN f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C VIN — IO –100 –30 VO=–0.2V T.


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