UN6122

Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 0.15 s q q Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. 1.0 s Resistance by Part Number q q q q q q UN6121 UN6122 UN6123 UN6124 UN612X UN612Y (R1) 2.2kΩ 4.7KΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ 0.45–0.05 +0.1 1 2 3 0.45–0.05 2.5±0.5 2.5±0.5 +0.1 1 : Emitter 2 : Collector 3 : Base MT-1 Type Pakage s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 –50 –500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C R1 Internal Connection 2.5±0.1 C B R2 E 14.5±0.5 0.85 3.5±0.1 0.8 1 Transistors with built-in Resistor UN6121/6122/6123/6124/612X/612Y s Electrical Characteristics Parameter Collector cutoff current UN612X Collector cutoff current UN612X Emitter cutoff current UN6121 UN6122/612X/612Y UN6123/6124 (Ta=25˚C) Symbol ICBO ICBO ICEO ICEO IEBO VCBO VCEO Conditions VCB = –50V, IE = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VCE = –50V, IB = 0 VEE = –6V, IC = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 –50 –50 40 hFE VCE = –10V, IC = –100mA 50 60 20 VCE(sat) VC...