Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/ 6219/6210/621D/621E/621F/621K/621L
Silico...
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/ 6219/6210/621D/621E/621F/621K/621L
Silicon
NPN epitaxial planer
transistor
For digital circuits
Unit: mm
6.9±0.1
0.15
0.7
4.0
1.05 2.5±0.1 ±0.05 (1.45) 0.8
q
s Resistance by Part Number
q q q q q q q q q q q q q q q
0.45–0.05
+0.1
UN6211 UN6212 UN6213 UN6214 UN6215 UN6216 UN6217 UN6218 UN6219 UN6210 UN621D UN621E UN621F UN621K UN621L
(R1) 10kΩ 22kΩ 47kΩ 10kΩ 10kΩ 4.7kΩ 22kΩ 0.51kΩ 1kΩ 47kΩ 47kΩ 47kΩ 4.7kΩ 10kΩ 4.7kΩ
(R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 4.7kΩ 4.7kΩ
1
2
3
0.45–0.05
2.5±0.5
2.5±0.5
+0.1
1 : Emitter 2 : Collector 3 : Base MT-1 Type Pakage
Internal Connection
R1
2.5±0.1
C
B
R2
E
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg
(Ta=25˚C)
Ratings 50 50 100 400 150 –55 to +150 Unit V V mA mW ˚C ˚C
14.5±0.5
q
0.85
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.
0.65 max.
1.0
3.5±0.1
0.8
s Features
1
UN6211/6212/6213/6214/6215/6216/6217/6218/ 6219/6210/621D/621E/621F/621K/621L
Transistors with built-in Resistor
s Electrical Characteristics
Parameter Collector cutoff current UN6211 UN6212/6214/621E/621D Emitter cutoff current UN6213 UN6215/6216/6217/6210 UN621F/621K UN6219 UN6...