UN7231

Transistors with built-in Resistor UN7231 Silicon NPN epitaxial planer transistor Unit: mm For amplification of the low frequency 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 4.0–0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Peak collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC ICP PT* Tj Tstg (Ta=25˚C) marking Ratings 20 20 0.7 1.5 1.0 150 –55 to +150 Unit V V A A W ˚C ˚C 1 : Emitter 2 : Collector 3 : Base EIAJ : SC–62 Mini-Power Type Package Marking Symbol: IC Internal Connection R1(1kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. C B R2 (47kΩ) E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Input resistance Resistance ratio (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) fT R1 R1/R2 Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA* IC = 500mA, IB = 5mA* VCB = 20V, IE = –20mA, f = 200MHz 0.7 0.016 55 1 0.0...