Document
Transistors with built-in Resistor
UNR212x Series (UN212x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits ■ Features
• Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing
1
0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3
0.16+0.10 –0.06
2 (0.65)
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
■ Resistance by Part Number
• UNR2121 • UNR2122 • UNR2123 • UNR2124 • UNR212X • UNR212Y Marking Symbol (R1) (UN2121) 7A 2.2 kΩ (UN2122) 7B 4.7 kΩ (UN2123) 7C 10 kΩ (UN2124) 7D 2.2 kΩ (UN212X) 7I 0.27 kΩ (UN212Y) 7Y 3.1 kΩ (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ
10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Internal Connection
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −500 200 150 −55 to +150 Unit V V mA mW °C °C R1 B R2 E C
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) UNR212X Collector-emitter cutoff current (Base open) UNR212X Emitter-base UNR2121 IEBO VEB = −6 V, IC = 0 ICEO VCE = −50 V, IB = 0 Symbol VCBO VCEO ICBO Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 Min −50 −50 −1.0 − 0.1 −1.0 − 0.5 −5 −2 −1 hFE VCE = −10 V, IC = −5 mA 40 50 60 20 Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003 SJH00008CED
Typ
0 to 0.1
Max
Unit V V µA µA mA
cutoff current UNR2122/212X/212Y (Collector open) UNR2123/2124 Forward current UNR2121 transfer ratio UNR2122/212Y UNR2123/2124 UNR212X
0.4±0.2
5˚
1
UNR212x Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter Collector-emitter saturation voltage UNR212X/212Y Output voltage high-level Output voltage low-level Transition frequency Input resistance UNR2121/2124 UNR2122 UNR2123 UNR212X UNR212Y Resistance ratio UNR2124 UNR212X UNR212Y R1/R2 0.8 0.17 0.043 0.53 VOH VOL fT R1 Symbol VCE(sat) Conditions IC = −100 mA, IB = −5 mA IC = −10 mA, IB = − 0.3 mA VCC = −5 V, VB = − 0.5 V, RL = 500 Ω VCC = −5 V, VB = −3.5 V, RL = 500 Ω VCB = −10 V, IE = 50 mA, f = 200 MHz −30% 200 2.2 4.7 10 0.27 3.1 1.0 0.22 0.054 0.67 1.2 0.27 0.065 0.81 +30% −4.9 − 0.2 V V MHz kΩ Min Typ Max − 0.25 Unit V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart PT Ta
250
Total power dissipation PT (mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJH00008CED
UNR212x Series
Characteristics charts of UNR2121 IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
−100 IC / IB = 10
400
hFE IC
VCE = −10 V
−240
Collector current IC (mA)
−160
IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −2 −4 −6 −8 −10 −12
−10
Forward current transfer ratio hFE
−200
300 Ta = 75°C
−120
−1
Ta = 75°C 25°C
200
−80
− 0.1 −25°C −10 −100 −1 000
100
25°C
−40
−25°C 0 −1 −10 −100 −1 000
0
0
− 0.01 −1
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
12 f = 1 MHz IE = 0 Ta = 25°C
IO VIN
−104 V O = −5 V Ta = 25°C
−100
VIN IO
VO = − 0.2 V Ta = 25°C
10
Output current IO (µA)
8
Input voltage VIN (V)
−103
−10
6
−102
−1
4
−10
− 0.1
2
0 − 0.1
−1
−10
−100
−1 − 0.4
− 0.6
− 0.8
−1.0
−1.2
−1.4
− 0.01 − 0.1
−1
−10
−100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR2122 IC VCE
Ta = 25°C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
−100 IC / IB = 10
160 VCE = −10 V
hFE IC
Ta = 75°C
−300
Collector current IC (mA)
−200
IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA
−10
Forward current transfer ratio hFE
−250
120 25°C
−150
−1
Ta = 75°C 25°C
80
−100
−25°C 40
− 0.1 −25°C
−50
0
0
−2
−4
−6
−8
−10
−12
− 0.01 −1
−10
−100
−1 000
0 −1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
SJH00008CED
3
UNR212x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
24 f = 1 MHz IE = 0 Ta = 25°C
IO VIN
−104 V O = −5 V Ta = 25°C
−100
VIN IO
VO = − 0.2 V Ta = 25°C
20
Output current IO (µA)
16
Input voltage VIN (V)
−103
−10
12
−102
−1
8
−10
− 0.1
4
0 − 0.1
−1
−10
−100
−1 − 0.4
− 0.6
− 0.8
−1.0
−1.2
−1.4
− 0.01 − 0.1
−1
−10
−100
Collector-base voltage VCB (V)
Input v.