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UNR212Y Dataheets PDF



Part Number UNR212Y
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planar type
Datasheet UNR212Y DatasheetUNR212Y Datasheet (PDF)

Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number • UNR2121 • UNR2122.

  UNR212Y   UNR212Y



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Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number • UNR2121 • UNR2122 • UNR2123 • UNR2124 • UNR212X • UNR212Y Marking Symbol (R1) (UN2121) 7A 2.2 kΩ (UN2122) 7B 4.7 kΩ (UN2123) 7C 10 kΩ (UN2124) 7D 2.2 kΩ (UN212X) 7I 0.27 kΩ (UN212Y) 7Y 3.1 kΩ (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −500 200 150 −55 to +150 Unit V V mA mW °C °C R1 B R2 E C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) UNR212X Collector-emitter cutoff current (Base open) UNR212X Emitter-base UNR2121 IEBO VEB = −6 V, IC = 0 ICEO VCE = −50 V, IB = 0 Symbol VCBO VCEO ICBO Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 Min −50 −50 −1.0 − 0.1 −1.0 − 0.5 −5 −2 −1 hFE VCE = −10 V, IC = −5 mA 40 50 60 20 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00008CED Typ 0 to 0.1 Max Unit V V µA µA mA cutoff current UNR2122/212X/212Y (Collector open) UNR2123/2124 Forward current UNR2121 transfer ratio UNR2122/212Y UNR2123/2124 UNR212X  0.4±0.2 5˚ 1 UNR212x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Collector-emitter saturation voltage UNR212X/212Y Output voltage high-level Output voltage low-level Transition frequency Input resistance UNR2121/2124 UNR2122 UNR2123 UNR212X UNR212Y Resistance ratio UNR2124 UNR212X UNR212Y R1/R2 0.8 0.17 0.043 0.53 VOH VOL fT R1 Symbol VCE(sat) Conditions IC = −100 mA, IB = −5 mA IC = −10 mA, IB = − 0.3 mA VCC = −5 V, VB = − 0.5 V, RL = 500 Ω VCC = −5 V, VB = −3.5 V, RL = 500 Ω VCB = −10 V, IE = 50 mA, f = 200 MHz −30% 200 2.2 4.7 10 0.27 3.1 1.0 0.22 0.054 0.67 1.2 0.27 0.065 0.81 +30% −4.9 − 0.2 V V MHz kΩ Min Typ Max − 0.25 Unit V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJH00008CED UNR212x Series Characteristics charts of UNR2121 IC  VCE Ta = 25°C VCE(sat)  IC Collector-emitter saturation voltage VCE(sa.


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