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UNR2154 Dataheets PDF



Part Number UNR2154
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planer transistor
Datasheet UNR2154 DatasheetUNR2154 Datasheet (PDF)

Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planer transistor 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 For digital circuits 0.65±0.15 1.5 –0.05 +0.25 2.9 –0.05 0.95 q q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.9±0.2 +0.2 s Features 0.95 1 .

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Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planer transistor 2.8 –0.3 +0.2 Unit: mm 0.65±0.15 For digital circuits 0.65±0.15 1.5 –0.05 +0.25 2.9 –0.05 0.95 q q q High forward current transfer ratio hFE. Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 1.9±0.2 +0.2 s Features 0.95 1 3 1.45 0 to 0.1 2 1.1 –0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –30 –30 –100 200 150 –55 to +150 Unit V V mA mW ˚C ˚C 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0.8 EIAJ:SC-59 Mini Type Package Marking Symbol: EV Internal Connection R1(10kΩ) C B R2 (47kΩ) E s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = –10V, IE = 1mA, f = 200MHz Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –30V, IE = 0 VCE = –30V, IB = 0 VEB = –3V, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = – 0.33mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ –30% 10 0.213 80 –4.9 – 0.2 +30% 80 – 0.5 –1.2 min –30 –30 – 0.1 – 0.5 – 0.1 typ max Unit V V µA µA mA — V V V kΩ — MHz Note) The part number in the parenthesis shows conventional part number. 0.16 –0.06 +0.2 +0.1 0.4 –0.05 +0.1 1 Transistors with built-in Resistor PT — Ta 250 – 200 Ta=25˚C –175 UNR2154 IC — VCE –100 VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) IB= –1.0mA – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA IC/IB=10 Total power dissipation PT (mW) Collector current IC (mA) 200 –150 –125 –100 –75 – 50 – 25 –10 150 – 0.4mA – 0.3mA – 0.2mA –1 25˚C Ta=75˚C – 0.1 – 25˚C 100 50 – 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 – 0.01 –1 –10 –100 –1000 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE — IC 300 6 Ta=75˚C 250 25˚C 200 Cob — VCB Collector output capacitance Cob (pF) VCE= –10V f=1MHz IE=0 Ta=25˚C –10000 IO — VIN VO= – 5V Ta=25˚C Forward current transfer ratio hFE 5 Output current IO (µA) –1000 – 25˚C 4 150 3 –100 100 2 –10 50 1 0 –1 –10 –100 –1000 0 –1 –10 –100 –1 – 0.4 – 0.6 – 0.8 –1 –1.2 –1.4 Collector current IC (mA) Collector to base voltage VCB (V) Input voltage VIN (V) VIN — IO –100 VO= – 0.2V Ta=25˚C Input voltage VIN (V) –10 –1 – 0.1 – 0.01 – 0.1 –1 –10 –100 Output current IO (mA) 2 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in .


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