UNR2227

Transistors with built-in Resistor UNR2225 (UN2225), UNR2226 (UN2226), UNR2227 (UN2227) Silicon NPN epitaxial planar type For muting ■ Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts Mini type package allowing easy automatic insertion through tape packing and magazine packing 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 1 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Resistance by Part Number Marking Symbol (R1) UNR2225 (UN2225) FZ 10 kΩ UNR2226 (UN2226) FY 4.7 kΩ UNR2227 (UN2227) FW 6.8 kΩ (R2)   6.8 kΩ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 5 600 200 150 −55 to +150 Unit V V V mA mW °C °C Internal Connection R1 B R2 E C ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio UNR2227 UNR2225/2226 VCE(sat) R1 IC = 50 mA, IB = 2.5 mA −30% 4.7 6.8 10 R1/R2 0.8 1.0 1.2  Symbol VCBO VCEO VEBO ICBO IEBO hFE...