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UNR911N Dataheets PDF



Part Number UNR911N
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP epitaxial planar type
Datasheet UNR911N DatasheetUNR911N Datasheet (PDF)

Transistors with built-in Resistor UNR911xJ Series (UN911xJ Series) Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • SS-Mini type package, allowing automatic insertion through tape packing. 1.60+0.05 –0.03 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+0.03 –0.01 1.60±0.05 0.85+0.05 –0.03 1 0.27±0.02 2 (0.50)(0.50) 0 to 0.02 (0.80) ■ Resistance by Part Number Marking Symbol (R1) • .

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Transistors with built-in Resistor UNR911xJ Series (UN911xJ Series) Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • SS-Mini type package, allowing automatic insertion through tape packing. 1.60+0.05 –0.03 1.00±0.05 3 0.80±0.05 Unit: mm 0.12+0.03 –0.01 1.60±0.05 0.85+0.05 –0.03 1 0.27±0.02 2 (0.50)(0.50) 0 to 0.02 (0.80) ■ Resistance by Part Number Marking Symbol (R1) • UNR9110J (UN9110J) 6L 47 kΩ • UNR9111J (UN9111J) 6A 10 kΩ • UNR9112J (UN9112J) 6B 22 kΩ • UNR9113J (UN9113J) 6C 47 kΩ • UNR9114J (UN9114J) 6D 10 kΩ • UNR9115J (UN9115J) 6E 10 kΩ • UNR9116J (UN9116J) 6F 4.7 kΩ • UNR9117J (UN9117J) 6H 22 kΩ • UNR9118J (UN9118J) 6I 0.51 kΩ • UNR9119J (UN9119J) 6K 1 kΩ • UNR911AJ 6X 100 kΩ • UNR911BJ 6Y 100 kΩ • UNR911CJ 6Z  • UNR911DJ (UN911DJ) 6M 47 kΩ • UNR911EJ (UN911EJ) 6N 47 kΩ • UNR911FJ (UN911FJ) 6O 4.7 kΩ • UNR911HJ (UN911HJ) 6P 2.2 kΩ • UNR911LJ (UN911LJ) 6Q 4.7 kΩ • UNR911MJ EI 2.2 kΩ • UNR911NJ EW 4.7 kΩ • UNR911TJ (UN911TJ) EY 22 kΩ • UNR911VJ FC 2.2 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 100 kΩ  47 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 5˚ 0.70+0.05 –0.03 5˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package Internal Connection R1 B R2 E C ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −100 125 125 −55 to +125 Unit V V mA mW °C °C Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2004 SJH00038BED 0.10 max. (0.375) 1 UNR911xJ Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-base cutoff current (Emitter open) Emitter-base UNR9115J/9116J/9117J/911BJ cutoff current UNR9110J/9113J/911AJ (Collector open) UNR9112J/9114J/911DJ/ 911EJ/911MJ/911NJ/911TJ UNR9111J UNR911FJ/911HJ UNR9119J UNR9118J/911CJ/911LJ/911VJ Forward current transfer ratio UNR911VJ UNR9118J/911LJ UNR9119J/911DJ/911FJ/911HJ UNR9111J UNR9112J/911EJ UNR9113J/9114J/911AJ/ 911CJ/911MJ UNR911NJ/911TJ UNR9110J/9115J/9116J/ 9117J/911BJ Collector-emitter saturation voltage UNR911VJ Output voltage high-level Output voltage low-level UNR9113J/911BJ UNR911DJ UNR911EJ UNR911AJ Transition frequency UNR9113J UNR911AJ UNR911CJ Input UNR9118J R1 fT VOH VOL VCE(sat) IC = −10 mA, IB = − 0.3 mA IC = −10 mA, IB = −1.5 mA VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VCC = −5 V, VB = −2.5 V, RL = 1 kΩ VCC = −5 V, VB = −3.5 V, RL = 1 kΩ VCC = −5 V, VB = −10 V, RL = 1 kΩ VCC = −5 V, VB = −6 V, RL = 1 kΩ VCC = −5 V, VB = −5 V, RL = 1 kΩ VCB = − 10 V, IE = 1 mA, f = 200 MHz VCB = − 10 V, IE = 1 mA, f = 200 MHz VCB = − 10 V, IE = 2 mA, f = .


UNR911MJ UNR911N UNR911NJ


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