Composite Transistors
UP04315
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
For switc...
Composite
Transistors
UP04315
Silicon
NPN epitaxial planar type (Tr1) Silicon
PNP epitaxial planar type (Tr2)
For switching/digital circuits
6 (0.30) 5 4 0.20+0.05 –0.02
Unit: mm
0.10±0.02
1.20±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 −50 −50 −100 125 125 −55 to +125 Unit V V mA V V mA mW °C °C
1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
0 to 0.02
4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package
Marking Symbol: CB Internal Connection
6 Tr1 Tr2 1 2 3 5 4
■ Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high level Output voltage low level Input resistance Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0...