UPA1458

DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The µPA1458 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES Surge Absorber (C - B) built in. Easy mount by 0.1 inch of terminal interval. High hFE for Darlington Transistor. ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard 10 1.4 0.6 ±0.1 2.54 1.4 0.5 ±0.1 µPA1458H 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Surge Sustaining Energy Collector Current (DC) Collector Current (pulse) Collector Current Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO ECEO(sus) IC(DC) ICBS(DC) IB(DC) PT1** PT2*** Tj 60 ± 10 60 ± 10 7 25 ±5 5 0.5 3.5 28 150 V V V mJ/unit A/unit A/unit mA/unit A/unit W W ˚C (B) (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 R1 R2 . R1 = . 3.0 kΩ . R2 = . 300 Ω I...