UPA1476

DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The µPA1476 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES ORDERING INFORMATION 1.4 0.6 ±0.1 2.5 Easy mount by 0.1 inch of terminal interval. High hFE for Darlington Transistor. Surge Absorber (Zener Diode) built in. 10 2.54 1.4 0.5 ±0.1 Part Number Package 10 Pin SIP Quality Grade Standard 1 2 3 4 5 6 7 8 9 10 µPA1476H Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. CONNECTION DIAGRAM 3 2 1 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT1** PT2*** TJ 100 ± 15 100 ± 15 8 ±2 ±3 0.2 3.5 28 150 V V V A/unit A/unit A/unit W W ˚C (B) (C) PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) : Emitter (E) 1, 10 R1 R2 (E) . R1 = . 10 kΩ . R2 = . 900 Ω Tstg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, T...