DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µPA1500B
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
DESCRIPTION
Th...
DATA SHEET
COMPOUND FIELD EFFECT POWER
TRANSISTOR
µPA1500B
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
DESCRIPTION
The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.
PACKAGE DIMENSIONS
(in millimeters)
31.5 MAX. 4.2 MAX.
4 V driving is possible Large Current and Low On-state Resistance ID(DC) = ± 3 A RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 2 A) Low Input Capacitance Ciss = 200 pF TYP. Surge Absorber, built in
1 2 3 4 5 6 7 8 9 10 11 12
2.54 TYP.
0.7±0.1
1.4±0.1 0.5±0.1
10.0 MIN.
10.5 MAX.
2.5 TYP.
FEATURES
1.4 TYP.
ORDERING INFORMATION
Type Number Package 12 Pin SIP
ELECTRODE CONNECTION
1, 5, 8, 12 GATE 2, 4, 9, 11 DRAIN, ANODE 6, 7 3, 10 SOURCE CATHODE
µPA1500BH
CONNECTION DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS Note 1 60 Gate to Source Voltage VGSS Note 2 ± 20 Drain Current (DC) ID(DC) ± 3.0 Drain Current (pulse) ID(pulse) Note 3 ± 12 Repetitive peak Reverse Voltage VRRM Note 4 65 Diode Forward Current IF(av) Note 4 3.0 Total Power Dissipation PT1 Note 5 28 Total Power Dissipation PT2 Note 6 4.0 Channel Temperature TCH 150 Storage Temperature Tstg –55 to 150 Single Avalanche Current IAS Note 7 3.0 Single Avalanche Energy EAS Note 7 0.9 Notes 1. VGS = 0 2. VDS = 0 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. Rating of Surge Absorber 5. 4 Circuits, TC = 25 ˚C 6. 4 Circuits, TA = 25 ˚C 7. Starting ...
