UPA1520B

DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. 26.8 MAX. 10 PACKAGE DIMENSIONS in millimeters 4.0 FEATURES 4 V driving is possible Large Current and Low On-state Resistance ID (DC) = ± 2.0 A RDS (on) 1 ≤ 0.17 Ω MAX. (VGS = 10 V, ID = 1 A) RDS (on) 1 ≤ 0.25 Ω MAX. (VGS = 4 V, ID = 1 A) Low Input Capacitance Ciss = 220 pF TYP. 2.54 1.4 0.6±0.1 1.4 0.5±0.1 ORDERING INFORMATION Type Number Package 10 Pin SIP 3 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM 5 7 9 µPA1520BH ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. VGS = 0 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 3. 4 circuits, TA = 25 °C VDSSNote 1 VGSSNote 2 ID(DC) ID(pulse)Note 3 PT1Note 4 PT2Note 5 TCH Tstg 30 ±20 ± 2.0 ± 8.0 28 3.5 150 –55 to +150 V V A/unit A/unit W W °C °C 2 1 4 6 8 10 ELECTRODE CONNECTION 2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source 2. VDS = 0 4. 4 circuits, TC = 25 °C The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Do...