UPA1708

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. 8 PACKAGE DRAWINGS (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) 1.44 1 5.37 MAX. +0.10 –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) Low Ciss : Ciss = 730 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8) 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1708G EQUIVARENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note3 Note4 Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 40 ±25 ±7.0 ±28 2.0 150 –55 to + 150 V V A A W °C °C Gate Drain Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. VGS = 0 V 2. VDS = 0 V Gate Protection Diode Source 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. Mounted on ceramic substrate of 1200 mm x 1.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceedin...