DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1725
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This µP...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1725
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This µPA1725 is N-Channel MOS Field Effect
Transistor designed for power management applications of notebook computers and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 2,3 4 5,6,7,8 ; ; ; ; Non connection Source Gate Drain
FEATURES
2.5-V gate drive and low on-resistance
1.8 MAX.
Built-in G-S protection diode Small and surface mount package (Power SOP8)
0.05 MIN.
Low Ciss : Ciss = 950 pF TYP.
0.15
RDS(on)3 = 30.0 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
+0.10 –0.05
1.44
RDS(on)1 = 21.0 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 22.0 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)
1 5.37 MAX.
4
6.0 ±0.3 4.4 0.8
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1725G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
20 ±12 ±7 ±28 2.0 150 –55 to + 150
2
V V A A W °C °C
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2mm Remark
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this...