UPA1728

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1728 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Single chip type Low On-state Resistance 5 5 5 5 RDS(on)1 = 19 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) 1.44 1 5.37 Max. +0.10 –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 23 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 24 mΩ (TYP.) (VGS = 4.0 V, ID = 4.5 A) Low Ciss : Ciss = 1700 pF (TYP.) Built-in G-S protection diode Small and surface mount package (Power SOP8) 1.8 Max. 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1728 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 60 ±20 ±9 ±36 2.0 150 –55 to + 150 9 8.1 2 V V A A W EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current Note3 Note3 Gate Body Diode °C °C A mJ Gate Protection Diode IAS EAS Source Single Avalanche Energy Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 5 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25°C, RG = 25 Ω, TGS = 20 V →0 V Remark The diode c...