UPA1731

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1731 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. 8 PACKAGE DRAWING (Unit : mm) 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES Low on-resistance 1.44 RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A) 1.8 MAX. 1 5.37 MAX. 4 6.0 ±0.3 4.4 +0.10 –0.05 RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A) 0.8 0.05 MIN. Low Ciss : Ciss =2600 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) 0.15 RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1731G ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 # 20 # 10 # 40 V V A A W °C °C Gate Gate Protection Diode Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature 2.0 150 –55 to + 150 2 Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this devi...