UPA1755

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 –0.05 DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Dual chip type Low on-resistance 1.44 RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A) Low input capacitance Ciss = 895 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) 1.8 Max. 6.0 ±0.3 4.4 0.8 RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 +0.10 –0.05 EQUIVALENT CIRCUIT (1/2 Circuit) Drain µPA1755G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±7.0 ±28 1.7 2.0 150 –55 to + 150 2 V V A A W W °C °C Gate Body Diode Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor...