DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1760
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µPA1760
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The µPA1760 is N-Channel MOS Field Effect
Transistor designed for DC/DC Converters and power management application of notebook computers.
PACKAGE DRAWING (Unit : mm)
8 5 1 2 7, 8 3 4 5, 6 ; Source1 ; Gate1 ; Drain1 ; Source2 ; Gate2 ; Drain2 6.0 ±0.3 4.4
+0.10 –0.05
FEATURES
Dual Chip Type
1.44
Low On-Resistance 5 5 5
1.8 Max.
1 5.37 Max.
4
0.8
RDS(on)1 = 26.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 36.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)3 = 42.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) Low Ciss : Ciss = 760 pF TYP. Built-in G-S Protection Diode Small and Surface Mount Package (Power SOP8)
0.15
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
+0.10 –0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 ±20 ±8.0 ±32 1.7 2.0 150 –55 to + 150 8 6.4
V V A A W W °C °C A mJ
Gate Body Diode Drain
EQUIVALENT CIRCUIT (1/2 Circuit)
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature 5 5 Single Avalanche Current Single Avalanche Energy
Note3 Note3
IAS EAS
Gate Protection Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 5 5 2. TA = 25 °C, Mounted on ceramic substrate of 2000 mm x 1.6 mm 3. Sta...