UPA1763

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1763 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1763 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters. PACKAGE DRAWING (Unit : mm) 8 5 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 4.4 +0.10 –0.05 FEATURES Dual chip type Low on-resistance RDS(on)1 = 47.0 mΩ MAX. (VGS = 10 V, ID = 2.3 A) RDS(on)2 = 57.0 mΩ MAX. (VGS = 4.5 V, ID = 2.3 A) RDS(on)3 = 66.0 mΩ MAX. (VGS = 4.0 V, ID = 2.3 A) Low input capacitance Ciss = 870 pF TYP. Built-in G-S protection diode Small and surface mount package (Power SOP8) 1.8 MAX. 5 5 5 5 1 4 5.37 MAX. 1.44 0.8 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1763G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg 60 ±20 ±4.5 ±18 1.7 2.0 4.5 60 150 –55 to + 150 V V A A W W A mJ °C °C Gate Protection Diode Source Gate Body Diode EQUIVALENT CIRCUIT (1/2 Circuit) Drain Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) 5 5 Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Note3 Note3 5 Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2 2. TA = 25 °C, Mounted on ceramic substrate of 1200 mm x 2.2 mm ...