UPA1910

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1910 is a switching device which can be driven directly by a 2.5-V power source. The µPA1910 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 80 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) RDS(on)2 = 90 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A) RDS(on)3 = 100 mΩ MAX. (VGS = –3.0 V, ID = –1.0 A) RDS(on)4 = 130 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µPA1910TE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT –12 –10/+5 ±2.5 ±10 0.2 2 150 –55 to +150 V V A A W W °C °C Gate Protection Diode Marking: TB Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT1 Note2 Body Diode Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 board, t ≤ 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transi...