UPA505T

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The µPA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 +0.1 1.5 0.65 –0.15 0.16 +0.1 –0.06 FEATURES Two source common MOS FET circuits in package the same size as SC-59 Complementary MOS FETs are provided in one package. Automatic mounting supported 2.8 ±0.2 0 to 0.1 0.95 0.95 0.8 1.1 to 1.4 1.9 2.9 ±0.2 PIN CONNECTION (Top View) Marking: FA ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS 50/–50 –16 ± 20/+ –100 ± 100/+ –200 ± 200/+ 300 (TOTAL) 150 –55 to +150 UNIT V V mA mA mW ˚C ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively. Document No. G11241EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 µPA505T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current SYMBOL IDSS TEST CONDITIONS VDS = 50/–50 V, VGS = 0 MIN. – TYP. – MAX. 1.0 –1.0 Gate Leakage Current IGSS –16 V, VDS = 0 VGS = ± 20/+ – – ± 1.0 –10 + Gate Cut-off Voltage VGS(off) VDS = 5.0/–5.0 V, ID = 1/–1 µA 0.8 –1.5 Forward Transfer Admittance |yf...