UPA573T

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA573T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 +0.1 –0 0.15 +0.1 –0.05 FEATURES Two source common MOS FET circuits in package the same size as SC-70 Directly driven by ICs having a 3 V power supply Automatic mounting supported 0.7 0.65 1.3 2.0 ±0.2 0.65 0.9 ±0.1 1.25 ±0.1 2.1 ±0.1 0 to 0.1 EQUIVALENT CIRCUIT 5 4 PIN CONNECTION 1 (G1) 1. Gate G 2. Source (common) 3. Gate 2 (G2) 4. Drain 2 (D2) 5. Drain 1 (D1) Marking: CB 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg PW ≤ 10 ms, Duty Cycle ≤ 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATINGS –30 +7 +100 +200 200 (Total) 150 –55 to +80 –55 to +150 UNIT V V mA mA mW ˚C ˚C ˚C Document No. G11245EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA573T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay ...