DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA603T
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
The µPA603T is a mini-mold device...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µPA603T
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.65 +0.1 –0.5
0.32 +0.1 –0.05 0.16 +0.1 –0.06
FEATURES
Two MOS FET circuits in package the same size as SC-59 Complement to µPA602T Automatic mounting supported
2.8 ±0.2
1.5
0 to 0.1
0.95 1.9
0.95
0.8 1.1 to 1.4
2.9 ±0.2
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS –50 +16 –100 –200 300 (Total) 150 –55 to +150 UNIT V V mA mA mW ˚C ˚C
* PW ≤ 10 ms, Dury Cycle ≤ 50 %
Document No. G11250EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan
©
1996
µPA603T
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VGS(on) = –4.0 V, RG = 10 Ω, VDD = –5.0 V, ID = –10 mA, RL = 500 Ω TEST CONDITIONS VDS = –50 V...
