UPA610TA

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is 2.8 ±0.2 Package Drawings (unit: mm) 0.65 +0.1 –0.15 0.32 +0.1 –0.05 0.16 +0.1 –0.06 suitable for use as a high-speed switching device in digital circuits. 1.5 0 to 0.1 FEATURES Can be driven by a 2.5 V power source. Low Gate Cut-off Voltage. 0.95 0.95 1.9 2.9 ±0.2 0.8 1.1 to 1.4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg –30 +20 +0.1 +0.4 Note 300 (TOTAL) 150 –55 to +150 V V A A mW °C °C Gate Equivalent Circuit Drain Internal Diode Note PW ≤ 10 µs, Duty Cycle ≤ 1 % Gate Protect Diode Source Pin Connection (Top View) 6 5 4 1. Source 1 2. Source 2 3. Gate 2 4. Drain 2 5. Gate 1 6. Drain 1 1 2 3 Marking : JB The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11199EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan © 1996 µPA610TA ELECTRICAL CHARACTERISTICS...